Chengdu Zhongmu Daxin launches chip-based low-temperature, low-noise amplifier with independent intellectual property rights
(hereinafter referred to as "SMIT") today launched a new chip-based low-temperature low-noise amplifier (ZW-LNA2.4-9A). The product can operate at 4K ambient temperature and has key technical performance features such as low power consumption, high gain and low noise. The product has achieved the localisation of independent intellectual property rights and can achieve the replacement of similar foreign products.
Cryogenic Low Noise Amplifer (Cryo-LNA) is mainly used in superconducting quantum computing, silicon-based quantum computing, astronomical observation and electronic countermeasures, etc. It is a key device for cryogenic measurement systems, and Cryo-LNA has long been monopolised by international manufacturers, with products from brands such as Ampli Tech, Atlantic Microwave, B&ZTechnology, Low Noise Factory and QuinStarTechnology, Inc. and other brands. In recent years, the purchase of low-temperature low-noise amplifier (LNA) products has been restricted, and the launch of the independently developed chip-based low-temperature low-noise amplifier (ZW-LNA2.4-9A) has provided a strong technical and product guarantee to solve the problem of localization and independent control of this product.
The new chip-based low-temperature low-noise amplifier (ZW-LNA2.4-9A) has the following core performance features.
1) The first SiGe process low-temperature low-noise amplifier chip in China
At present, ultra-low temperature low-noise amplifiers (LNAs) are mainly realized by GaAs/InP HEMT process, which has the characteristics of low power consumption and low noise, but the cost is high and it is difficult to realize the integration of the array. Low-cost low-temperature CMOS LNAs exhibit noise saturation near ambient temperatures of 20K~100K, and actual measurements show that their noise temperature at 4K is about 30~60K, which is only half the noise temperature reduction compared to room temperature of 300K. The new ultra-low-temperature low-noise amplifier (LNA) designed and implemented by SMIT using the SiGe process has high transconductance and low channel noise at low temperature, avoiding the noise saturation phenomenon of CMOS devices, and its noise temperature and power consumption are comparable to those of low-temperature GaAs/InP HEMT LNAs.
2) High integration towards monolithic quantum reflectance measurement array chip SoC
In the design process of low-noise amplifiers, gain, noise figure, input matching, linearity, power consumption and other indicators are usually taken into account, but while meeting many design requirements, accomplishing high integration is also the most difficult goal to achieve. the GaAs/InP HEMT process, although it has lower noise and power consumption, cannot achieve monolithic integration of low-noise amplifiers, RF front ends and digital-to-analog hybrid circuits, and the application scenario is limited. Application scenarios are limited. The ultra-low temperature low-noise amplifier designed and implemented by the SiGe process is better integrated than the GaAs/InP HEMT, which can realize the monolithic quantum reflectance measurement array chip SoC in the future.
3) Low DC power consumption, measured power consumption is less than 2mW, adapting to chiller thermal capacity limited scenario
With the expansion of quantum bit scale from single bit to kilobit, the system power consumption is increasing. Conventional CMOS low-noise amplifiers in the same frequency band consume 50 mW of DC power when they achieve more than 30 dB gain and the lowest noise factor. The DC power consumption of low-noise amplifiers severely limits the number of quantum bits in the cooler and affects the minimum temperature that the system can reach. The SiGe process low-temperature low-noise amplifier covered in this report has a measured 4K DC power consumption of less than 2mW, which is only 1/10th of the conventional technology, greatly reducing the performance pressure on the chiller.
Relying on its independent R&D technology team, SMIT has successfully developed a new low-temperature low-noise amplifier product using the SiGe process. The launch of this product and subsequent series of products will bring more choices to relevant research institutions and industries. With the feedback from this trial, SMIT will continue to refine the product development and iteration, and launch a series of low-temperature low-noise amplifier products for different needs.
